Alternative names (2)
band gap • bandGapTypeRandom triples
| Subject | Object |
|---|---|
| gptkb:Lead_Tungstate | 3.8 eV |
| gptkb:niobium(V)_oxide | 3.4 eV |
| gptkb:Gallium_Arsenide_(GaAs) | 1.42 eV |
| gptkb:Yttrium_Aluminum_Garnet_(YAG) | 6.4 eV |
| gptkb:amorphous_germanium | ~0.9 eV |
| gptkb:amorphous_silicon | ~1.7 eV |
| gptkb:black_phosphorus | 2.0 eV (monolayer) |
| gptkb:HgTe | zero (semimetal) |
| gptkb:silicon_dioxide | 8.9 eV (quartz) |
| gptkb:indium_phosphide_(InP) | 1.344 eV |
| gptkb:gallium(III)_oxide | 4.8 eV |
| gptkb:Phosphorene | direct |
| gptkb:Ga2O3 | 4.8 eV |
| gptkb:Bi2Te3 | 0.15 eV |
| gptkb:Y3Fe5O12 | 2.85 eV |
| gptkb:Molybdenum_Disulfide | 1.2–1.8 eV |
| gptkb:ZnTe | 2.26 eV |
| gptkb:ZnS | 3.91 eV (wurtzite) |
| gptkb:aluminum_arsenide | direct |
| gptkb:Gallium_Arsenide_(GaAs) | direct |