Alternative names (2)
band gap • bandGapTypeRandom triples
| Subject | Object |
|---|---|
| gptkb:gallium_phosphide | 2.26 eV |
| gptkb:monolayer_MoS2 | direct |
| gptkb:indium(III)_phosphide | 1.344 eV |
| gptkb:Silica | 8.9 eV (amorphous) |
| gptkb:Calcium_Fluoride | 12.1 eV |
| gptkb:tungsten_disulfide | 2.1 eV (monolayer) |
| gptkb:ZnSe | 2.7 eV (at 300 K) |
| gptkb:Indium_Phosphide_(InP) | 1.344 eV |
| gptkb:Indium_Phosphide | 1.344 eV |
| gptkb:III-V_semiconductor | direct band gap (in many cases) |
| gptkb:Copper_Indium_Gallium_Selenide | 1.0–1.7 eV |
| gptkb:silicon_dioxide | 8.9 eV (quartz) |
| gptkb:Lead_Tungstate | 3.8 eV |
| gptkb:amorphous_germanium | ~0.9 eV |
| gptkb:lead_zirconate_titanate | ~3.5 eV |
| gptkb:Ga2O3 | 4.8 eV |
| gptkb:EuS | 1.65 eV |
| gptkb:ferric_oxide | 2.1 eV |
| gptkb:cadmium_selenide | 1.74 eV (at 300 K) |
| gptkb:single-walled_carbon_nanotubes | depends on chirality |