Alternative names (2)
band gap • bandGapTypeRandom triples
| Subject | Object |
|---|---|
| gptkb:WSe2 | direct (monolayer) |
| gptkb:Phosphorene | direct |
| gptkb:Yttrium_Aluminum_Garnet_(YAG) | 6.4 eV |
| gptkb:NiO | 3.6–4.0 eV |
| gptkb:aluminum_arsenide | 1.42 eV |
| gptkb:Zirconium_Carbide | metallic conductor |
| gptkb:ZnTe | direct |
| gptkb:molybdenum_disulfide | 1.8 eV (monolayer) |
| gptkb:InGaAs | direct |
| gptkb:Boron_nitride | 5.9 eV (hexagonal) |
| gptkb:Cadmium_Zinc_Telluride | 1.44 eV |
| gptkb:single-walled_carbon_nanotubes | depends on chirality |
| gptkb:GaN_(Gallium_Nitride) | 3.4 eV |
| gptkb:silicon_nitride | 5.3 eV |
| gptkb:TiN | 0.9 eV |
| gptkb:ZnSe | direct |
| gptkb:lead_zirconate_titanate | ~3.5 eV |
| gptkb:Indium_Phosphide | 1.344 eV |
| gptkb:gallium_arsenide_(GaAs) | direct |
| gptkb:Indium_phosphide | direct |