Alternative names (2)
band gap • bandGapTypeRandom triples
| Subject | Object |
|---|---|
| gptkb:Germanium | 0.67 eV |
| gptkb:Gallium_Nitride_(GaN) | direct |
| gptkb:ZnS | 3.91 eV (wurtzite) |
| gptkb:yttrium_iron(3+)_oxide | 2.85 eV |
| gptkb:Molybdenum_Disulfide | 1.2–1.8 eV |
| gptkb:indium(III)_phosphide | 1.344 eV |
| gptkb:aluminum_gallium_indium_phosphide | direct |
| gptkb:Copper_Indium_Gallium_Selenide | 1.0–1.7 eV |
| gptkb:amorphous_germanium | ~0.9 eV |
| gptkb:GaAs | 1.42 eV |
| gptkb:cadmium_selenide | 1.74 eV (at 300 K) |
| gptkb:ZrSiO4 | 6.0 eV |
| gptkb:Calcium_Fluoride | 12.1 eV |
| gptkb:gallium_arsenide | 1.42 eV |
| gptkb:III-V_semiconductor | direct band gap (in many cases) |
| gptkb:lead_zirconate_titanate | ~3.5 eV |
| gptkb:Black_Phosphorus | 0.3 eV |
| gptkb:Silicon_(Si) | 1.12 eV |
| gptkb:YMnO3 | ~1.5 eV |
| gptkb:nickel(II)_oxide | 3.6–4.0 eV |