Alternative names (2)
band gap • bandGapTypeRandom triples
| Subject | Object |
|---|---|
| gptkb:(Ni,Zn)Fe2O4 | ~1.9 eV |
| gptkb:Gallium_Arsenide_(GaAs) | direct |
| gptkb:Yttrium_Aluminum_Garnet_(YAG) | 6.4 eV |
| gptkb:Silicon_(Si) | 1.12 eV |
| gptkb:V2O3 | narrow |
| gptkb:Gallium_Arsenide_(GaAs) | 1.42 eV |
| gptkb:cadmium_sulfide | 2.42 eV |
| gptkb:black_phosphorus | 2.0 eV (monolayer) |
| gptkb:Gallium_Nitride_(GaN) | 3.4 eV |
| gptkb:silicon_nitride | 5.3 eV |
| gptkb:yttrium_iron_garnet | 2.85 eV |
| gptkb:II-VI_semiconductors | indirect band gap |
| gptkb:AgBr | 2.6 eV |
| gptkb:bismuth_telluride | 0.15 eV |
| gptkb:mercury_cadmium_telluride | narrow band gap |
| gptkb:lithium_tantalate | 4.5 eV |
| gptkb:Indium_Phosphide_(InP) | 1.344 eV |
| gptkb:solid_C60 | ~1.5–2.3 eV |
| gptkb:Fullerene-C60 | 1.5–1.9 eV |
| gptkb:Black_Phosphorus | 0.3 eV |