Alternative names (2)
band gap • bandGapTypeRandom triples
| Subject | Object |
|---|---|
| gptkb:LiNbO3 | 3.78 eV |
| gptkb:gallium_arsenide_(GaAs) | direct |
| gptkb:Yttrium_Aluminum_Garnet_(YAG) | 6.4 eV |
| gptkb:NiO | 3.6–4.0 eV |
| gptkb:InP | 1.344 eV |
| gptkb:III-V_semiconductors | direct band gap |
| gptkb:CdSe | 1.74 eV (bulk) |
| gptkb:Indium_phosphide | direct |
| gptkb:zinc_oxide | 3.3 eV |
| gptkb:Zinc_blende | 3.54 eV |
| gptkb:III-V_semiconductor | direct band gap (in many cases) |
| gptkb:yttrium_iron_garnet | 2.85 eV |
| gptkb:gallium_nitride | 3.4 eV |
| gptkb:CdZnTe | 1.44–2.26 eV |
| gptkb:Gallium_Arsenide_(GaAs) | 1.42 eV |
| gptkb:cadmium_selenide | 1.74 eV (at 300 K) |
| gptkb:Gallium_Arsenide | 1.42 eV |
| gptkb:aluminum_arsenide | direct |
| gptkb:molybdenum_disulfide | 1.2 eV (bulk) |
| gptkb:lead_zirconate_titanate | ~3.5 eV |