Alternative names (2)
band gap • bandGapTypeRandom triples
| Subject | Object |
|---|---|
| gptkb:Gallium_Arsenide_(GaAs) | 1.42 eV |
| gptkb:TiN | 0.9 eV |
| gptkb:LiNbO3 | 3.78 eV |
| gptkb:yttrium_iron(3+)_oxide | 2.85 eV |
| gptkb:Boron_nitride | 5.9 eV (hexagonal) |
| gptkb:BiFeO3 | 2.1–2.7 eV |
| gptkb:zinc_blende | 3.54 eV |
| gptkb:YIG | 2.85 eV |
| gptkb:Indium_gallium_arsenide | direct bandgap |
| gptkb:Gallium_Arsenide | 1.42 eV |
| gptkb:yttrium_iron_garnet | 2.85 eV |
| gptkb:V2O3 | narrow |
| gptkb:WSe2 | indirect (bulk) |
| gptkb:III-V_semiconductor | direct band gap (in many cases) |
| gptkb:Fullerene-C60 | 1.5–1.9 eV |
| gptkb:YMnO3 | ~1.5 eV |
| gptkb:InP | 1.344 eV |
| gptkb:Silver_bromide | 2.6 eV |
| gptkb:CZT | 1.4-2.2 eV |
| gptkb:yttrium_manganite | ~1.5 eV |