Alternative names (2)
band gap • bandGapTypeRandom triples
| Subject | Object |
|---|---|
| gptkb:Silicon_(Si) | 1.12 eV |
| gptkb:(Ni,Zn)Fe2O4 | ~1.9 eV |
| gptkb:bismuth_telluride | 0.15 eV |
| gptkb:ZnTe | direct |
| gptkb:ZnSe | 2.7 eV (at 300 K) |
| gptkb:BiFeO3 | 2.1–2.7 eV |
| gptkb:zinc_oxide | 3.3 eV |
| gptkb:Cadmium_Zinc_Telluride | 1.44 eV |
| gptkb:Indium_gallium_arsenide | direct bandgap |
| gptkb:Indium_Phosphide_(InP) | direct |
| gptkb:phosphorene | 1.5-2.0 eV |
| gptkb:AlGaInP | direct |
| gptkb:HgSe | narrow |
| gptkb:GaN | 3.4 eV |
| gptkb:black_phosphorus | 0.3 eV (bulk) |
| gptkb:Zirconium_Carbide | metallic conductor |
| gptkb:boron_nitride | 5.9 eV (hexagonal) |
| gptkb:lead(IV)_oxide | 1.9 eV |
| gptkb:(Bi,Sb)2Te3 | narrow |
| gptkb:lithium_tantalate | 4.5 eV |