Alternative names (2)
band gap • bandGapTypeRandom triples
| Subject | Object |
|---|---|
| gptkb:Gallium_Arsenide | direct |
| gptkb:LiNbO3 | 3.78 eV |
| gptkb:WSe2 | direct (monolayer) |
| gptkb:bismuth_telluride | 0.15 eV |
| gptkb:Indium_phosphide | 1.344 eV |
| gptkb:ZnSe | 2.7 eV (at 300 K) |
| gptkb:GaAs | direct |
| gptkb:SiO | 2.5 eV |
| gptkb:II-VI_semiconductors | indirect band gap |
| gptkb:Cadmium_Telluride | 1.44 eV |
| gptkb:Germanium | 0.67 eV |
| gptkb:Indium_phosphide | direct |
| gptkb:LiFePO4 | 3.8 eV |
| gptkb:aluminum_arsenide | 1.42 eV |
| gptkb:Black_Phosphorus | 0.3 eV |
| gptkb:Yttrium_Aluminum_Garnet_(YAG) | 6.4 eV |
| gptkb:silicon_dioxide | 8.9 eV (quartz) |
| gptkb:Lithium_niobate | ~4 eV |
| gptkb:GaN | 3.4 eV |
| gptkb:Indium_Phosphide_(InP) | direct |