Statements (28)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
semiconductor material
|
| gptkbp:bandGap |
direct band gap (in many cases)
|
| gptkbp:composedOf |
elements from group III of the periodic table
elements from group V of the periodic table |
| gptkbp:contrastsWith |
gptkb:II-VI_semiconductors
group IV semiconductors |
| gptkbp:crystalSystem |
gptkb:zinc_blende
gptkb:wurtzite |
| gptkbp:discoveredIn |
20th century
|
| gptkbp:example |
gptkb:indium_phosphide
gptkb:gallium_arsenide gptkb:gallium_nitride gptkb:aluminum_arsenide |
| https://www.w3.org/2000/01/rdf-schema#label |
III-V semiconductor
|
| gptkbp:notableFor |
high thermal conductivity
high electron mobility high saturation velocity |
| gptkbp:usedFor |
LEDs
laser diodes solar cells high-frequency transistors |
| gptkbp:usedIn |
integrated circuits
optoelectronics photodetectors microwave devices high-speed electronics |
| gptkbp:bfsParent |
gptkb:gallium_nitride
|
| gptkbp:bfsLayer |
5
|