|
gptkbp:instanceOf
|
gptkb:microprocessor
musical composition
|
|
gptkbp:appearance
|
gray, brittle solid
|
|
gptkbp:bandGap
|
direct
1.42 eV
|
|
gptkbp:CASNumber
|
1303-00-0
|
|
gptkbp:category
|
gptkb:III-V_semiconductor
|
|
gptkbp:chemicalFormula
|
gptkb:GaAs
|
|
gptkbp:containsElement
|
gptkb:gallium
gptkb:poisoning
|
|
gptkbp:crystalSystem
|
gptkb:zinc_blende
|
|
gptkbp:density
|
5.32 g/cm³
|
|
gptkbp:discoveredIn
|
1920s
|
|
gptkbp:electricalResistivity
|
10⁷ Ω·cm (intrinsic)
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
GaAs
|
|
gptkbp:IUPACName
|
gptkb:gallium_arsenide
|
|
gptkbp:latticeConstant
|
5.653 Å
|
|
gptkbp:meltingPoint
|
1238 °C
|
|
gptkbp:molecularWeight
|
144.64 g/mol
|
|
gptkbp:refractiveIndex
|
3.3 (at 1.5 μm)
|
|
gptkbp:solubility
|
insoluble
|
|
gptkbp:symbol
|
gptkb:GaAs
|
|
gptkbp:thermalConductivity
|
55 W/(m·K)
|
|
gptkbp:toxicity
|
toxic
|
|
gptkbp:usedIn
|
LEDs
laser diodes
solar cells
high-speed electronics
infrared light-emitting diodes
microwave frequency integrated circuits
monolithic microwave integrated circuits
|
|
gptkbp:bfsParent
|
gptkb:ATF2592_series
gptkb:ATF34C_series
gptkb:ATF37C_series
gptkb:ATF54C_series
gptkb:ATF61C_series
gptkb:ATF67C_series
gptkb:ATF81C_series
gptkb:ATF82C_series
gptkb:ATF97C_series
gptkb:gallium_arsenide
gptkb:Gallium_Arsenide_(GaAs)
|
|
gptkbp:bfsLayer
|
6
|