Statements (23)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
transistor |
| gptkbp:advantage |
higher gain
better linearity |
| gptkbp:feature |
low noise
high electron mobility high frequency performance |
| https://www.w3.org/2000/01/rdf-schema#label |
pHEMT
|
| gptkbp:inventedBy |
1980s
|
| gptkbp:material |
gptkb:GaAs
gptkb:AlGaAs gptkb:InGaAs |
| gptkbp:relatedTo |
gptkb:MESFET
HEMT |
| gptkbp:standsFor |
pseudomorphic High Electron Mobility Transistor
|
| gptkbp:technology |
transistor
|
| gptkbp:usedIn |
gptkb:RF_amplifiers
radar systems wireless communications satellite communications microwave circuits |
| gptkbp:bfsParent |
gptkb:GaAs_FET
|
| gptkbp:bfsLayer |
7
|