Gallium Arsenide Pseudomorphic High Electron Mobility Transistor
GPTKB entity
Statements (23)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:smartphone
transistor pseudomorphic high electron mobility transistor |
| gptkbp:abbreviation |
GaAs pHEMT
|
| gptkbp:application |
gptkb:RF_amplifiers
high-speed digital circuits microwave frequency circuits |
| gptkbp:feature |
low noise
two-dimensional electron gas high electron mobility high frequency performance high cutoff frequency high transconductance pseudomorphic channel |
| https://www.w3.org/2000/01/rdf-schema#label |
Gallium Arsenide Pseudomorphic High Electron Mobility Transistor
|
| gptkbp:material |
gptkb:gallium_arsenide
|
| gptkbp:relatedTo |
gptkb:microprocessor
gptkb:AlGaAs HEMT |
| gptkbp:structure |
heterojunction
|
| gptkbp:uses |
modulation-doped heterostructure
|
| gptkbp:bfsParent |
gptkb:GaAs_PHEMT
|
| gptkbp:bfsLayer |
7
|