US patent 5,554,147

GPTKB entity

Properties (88)
Predicate Object
gptkbp:instanceOf patent
gptkbp:abstract A method for producing high purity silicon using a chemical vapor deposition process.
gptkbp:applicationNumber 08/469,155
gptkbp:applicationType utility
gptkbp:assignee The_United_States_of_America_as_represented_by_the_Department_of_Energy
gptkbp:citedBy gptkb:US_patent_6,482,511
gptkb:US_patent_6,248,474
gptkb:US_patent_6,300,000
gptkb:US_patent_6,514,646
US patent 6,200,569
gptkbp:examiner gptkb:John_Doe
gptkbp:fieldOfUse semiconductors
gptkbp:filingDate June 7, 1995
gptkbp:grantDate September 10, 1996
https://www.w3.org/2000/01/rdf-schema#label US patent 5,554,147
gptkbp:internationalClassification H01L21/00
C01B33/00
gptkbp:inventor gptkb:Robert_J._McCarthy
gptkbp:issuedOn September 10, 1996
gptkbp:numberOfClaims 20
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US patent 5,554,170
US patent 5,554,171
US patent 5,554,172
US patent 5,554,173
US patent 5,554,174
US patent 5,554,175
US patent 5,554,176
US patent 5,554,177
US patent 5,554,178
US patent 5,554,179
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gptkbp:patentFamily US_patent_family
gptkbp:priorityDate June 7, 1995
gptkbp:relatedTo semiconductor manufacturing
chemical vapor deposition
energy applications
high purity materials
silicon purification
gptkbp:status active
gptkbp:title Method for producing a high purity silicon