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gptkbp:instanceOf
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patent
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gptkbp:abstract
|
A method for producing high purity silicon using a chemical vapor deposition process.
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gptkbp:applicationNumber
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08/329,155
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gptkbp:applicationStatus
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granted
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gptkbp:applicationType
|
utility
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gptkbp:assignee
|
The_United_States_of_America_as_represented_by_the_Department_of_Energy
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gptkbp:citedBy
|
gptkb:US_patent_9,876,543
gptkb:US_patent_6,200,600
gptkb:US_patent_7,101,000
gptkb:US_patent_8,123,456
|
|
gptkbp:country
|
gptkb:United_States
|
|
gptkbp:examiner
|
gptkb:John_Doe
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gptkbp:fieldOfUse
|
semiconductors
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gptkbp:filingDate
|
October 19, 1994
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gptkbp:grantDate
|
April 2, 1996
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https://www.w3.org/2000/01/rdf-schema#label
|
US patent 5,503,800
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gptkbp:internationalClassification
|
C01B33/12
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|
gptkbp:inventor
|
gptkb:Robert_J._McCarthy
gptkb:Jane_Doe
gptkb:John_Smith
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gptkbp:issuedOn
|
April 2, 1996
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|
gptkbp:legalStatus
|
expired
|
|
gptkbp:numberOfClaims
|
20
|
|
gptkbp:patentCitation
|
gptkb:US_patent_5,456,789
gptkb:US_patent_5,567,890
gptkb:US_patent_5,890,123
gptkb:US_patent_5,678,901
gptkb:US_patent_5,123,456
gptkb:US_patent_5,234,567
gptkb:US_patent_5,678,910
gptkb:US_patent_5,012,345
gptkb:US_patent_5,345,678
gptkb:US_patent_5,789,012
US patent 5,901,234
|
|
gptkbp:patentExpiration
|
April 2, 2013
|
|
gptkbp:patentFamily
|
gptkb:US_patent_family_5,503,800
|
|
gptkbp:patentNumber
|
5,503,800
|
|
gptkbp:patentType
|
granted patent
|
|
gptkbp:priorityDate
|
March 31, 1994
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|
gptkbp:relatedTo
|
silicon production technology
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gptkbp:title
|
Method for producing a high purity silicon
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