gptkbp:instanceOf
|
patent
|
gptkbp:abstract
|
A method for producing high purity silicon using a chemical vapor deposition process.
|
gptkbp:applicationNumber
|
08/469,174
|
gptkbp:applicationType
|
utility
|
gptkbp:assignee
|
The_United_States_of_America_as_represented_by_the_Department_of_Energy
|
gptkbp:citedBy
|
gptkb:US_patent_6,200,600
gptkb:US_patent_6,248,474
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gptkb:US_patent_6,800,000
gptkb:US_patent_6,500,000
|
gptkbp:fieldOfUse
|
semiconductors
|
gptkbp:grantDate
|
September 10, 1996
|
https://www.w3.org/2000/01/rdf-schema#label
|
US patent 5,554,194
|
gptkbp:internationalClassification
|
H01L21/00
C01B33/38
C23C14/00
|
gptkbp:inventor
|
gptkb:Robert_J._McCarthy
|
gptkbp:issuedOn
|
September 10, 1996
|
gptkbp:legalStatus
|
active
|
gptkbp:numberOfClaims
|
20
|
gptkbp:patentCitation
|
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gptkbp:patentFamily
|
US_patent_family
|
gptkbp:priorityDate
|
June 7, 1995
|
gptkbp:relatedTo
|
energy efficiency
semiconductor manufacturing
chemical vapor deposition
high purity materials
silicon purification
|
gptkbp:title
|
Method for producing a high purity silicon
|