US patent 5,554,169

GPTKB entity

Statements (46)
Predicate Object
gptkbp:instanceOf patent
gptkbp:abstract A method for producing high purity silicon using a chemical vapor deposition process.
gptkbp:applicationNumber 08/469,155
gptkbp:applicationPublicationNumber US_08/469,155_A1
gptkbp:applicationStatus abandoned
gptkbp:applicationType utility
gptkbp:assignee The_United_States_of_America_as_represented_by_the_Department_of_Energy
gptkbp:citedBy gptkb:US_patent_6,403,052
gptkb:US_patent_6,248,474
gptkb:US_patent_6,300,000
gptkb:US_patent_6,355,188
US patent 6,200,569
gptkbp:examiner gptkb:John_Doe
gptkbp:fieldOfUse semiconductors
gptkbp:filingDate June 7, 1995
gptkbp:grantDate September 10, 1996
https://www.w3.org/2000/01/rdf-schema#label US patent 5,554,169
gptkbp:internationalClassification H01L 21/00
C01B 33/38
gptkbp:inventor gptkb:Robert_J._McCarthy
gptkbp:inventorCountry gptkb:USA
gptkbp:issuedOn September 10, 1996
gptkbp:legalStatus patent granted
gptkbp:numberOfClaims 20
gptkbp:patentClassification chemical process
silicon production
gptkbp:patentExpiration 2016-09-10
gptkbp:patentFamily US_patent_family_5,554,169
gptkbp:patentInventor 20 years
gptkbp:patentLink https://patents.google.com/patent/US5554169A
gptkbp:patentNumber US_5,554,169_A
gptkbp:patentOffice gptkb:USPTO
gptkbp:patentType granted patent
gptkbp:priorityDate June 7, 1995
gptkbp:relatedPatent US patent 5,554,170
US patent 5,554,171
US patent 5,554,172
US patent 5,554,173
US patent 5,554,174
gptkbp:relatedTo energy efficiency
semiconductor manufacturing
chemical vapor deposition
high purity materials
silicon purification
gptkbp:status active
gptkbp:title Method for producing a high purity silicon