Properties (20)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
patent
|
| gptkbp:abstract |
A method for producing high purity silicon using a chemical vapor deposition process.
|
| gptkbp:applicationNumber |
08/469,155
|
| gptkbp:assignee |
The_United_States_of_America_as_represented_by_the_Department_of_Energy
|
| gptkbp:citedBy |
gptkb:US_patent_6,248,474
gptkb:US_patent_6,514,646 US patent 6,200,569 US_patent_6,300,052 US_patent_6,482,509 |
| gptkbp:fieldOfUse |
semiconductors
|
| https://www.w3.org/2000/01/rdf-schema#label |
US patent 5,554,168
|
| gptkbp:inventor |
gptkb:Robert_J._McCarthy
|
| gptkbp:issuedOn |
September 10, 1996
|
| gptkbp:priorityDate |
June 7, 1995
|
| gptkbp:relatedTo |
energy efficiency
semiconductor manufacturing chemical vapor deposition high purity materials silicon purification |
| gptkbp:title |
Method for producing a high purity silicon
|