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gptkbp:instanceOf
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patent
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gptkbp:abstract
|
A method for producing high purity silicon using a chemical vapor deposition process.
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gptkbp:applicationNumber
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08/469,174
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gptkbp:applicationType
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utility
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gptkbp:assignee
|
The_United_States_of_America_as_represented_by_the_Department_of_Energy
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gptkbp:citedBy
|
gptkb:US_patent_6,403,052
gptkb:US_patent_6,200,600
gptkb:US_patent_6,248,474
gptkb:US_patent_6,300,000
gptkb:US_patent_6,355,188
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|
gptkbp:country
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gptkb:United_States
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gptkbp:documentType
|
patent document
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gptkbp:examiner
|
gptkb:John_Doe
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|
gptkbp:fieldOfUse
|
semiconductors
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|
gptkbp:filingDate
|
June 7, 1995
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gptkbp:grantDate
|
September 10, 1996
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https://www.w3.org/2000/01/rdf-schema#label
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US patent 5,554,151
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gptkbp:internationalClassification
|
H01L21/00
C01B33/38
C23C14/00
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gptkbp:inventor
|
gptkb:Robert_J._McCarthy
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gptkbp:issuedOn
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September 10, 1996
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gptkbp:language
|
English
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gptkbp:legalStatus
|
active
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|
gptkbp:numberOfClaims
|
20
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|
gptkbp:patentCitation
|
gptkb:US_patent_5,554,150
gptkb:US_patent_5,554,153
gptkb:US_patent_5,554,152
US_patent_5,554,154
US_patent_5,554,155
|
|
gptkbp:patentExpiration
|
September 10, 2013
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gptkbp:patentFamily
|
gptkb:US_patent_family_5,554,151
|
|
gptkbp:patentNumber
|
5,554,151
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|
gptkbp:patentStatus
|
active
|
|
gptkbp:patentType
|
granted
|
|
gptkbp:priorityDate
|
June 7, 1995
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|
gptkbp:relatedPatent
|
gptkb:US_patent_5,554,150
gptkb:US_patent_5,554,153
gptkb:US_patent_5,554,152
US_patent_5,554,154
US_patent_5,554,155
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|
gptkbp:relatedTo
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energy efficiency
semiconductor manufacturing
chemical vapor deposition
high purity materials
silicon purification
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gptkbp:title
|
Method for producing a high purity silicon
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