Properties (40)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
patent
|
| gptkbp:abstract |
A method for producing high purity silicon using a chemical vapor deposition process.
|
| gptkbp:applicationDate |
June 7, 1995
|
| gptkbp:applicationNumber |
08/469,174
|
| gptkbp:assignee |
The_United_States_of_America_as_represented_by_the_Department_of_Energy
|
| gptkbp:citedBy |
gptkb:US_patent_7,500,000
gptkb:US_patent_8,000,000 gptkb:US_patent_7,000,000 gptkb:US_patent_6,200,000 gptkb:US_patent_6,500,000 |
| gptkbp:classification |
H01L 21/00
C23C 16/00 C01B 33/38 |
| gptkbp:examiner |
gptkb:John_Doe
|
| gptkbp:fieldOfUse |
semiconductors
|
| gptkbp:filedIn |
gptkb:United_States
|
| gptkbp:grantDate |
September 10, 1996
|
| gptkbp:hasFeature |
September 10, 2001
September 10, 2011 September 10, 2021 September 10, 2016 September 10, 2005 |
| https://www.w3.org/2000/01/rdf-schema#label |
US patent 5,554,200
|
| gptkbp:inventor |
gptkb:Robert_J._McCarthy
|
| gptkbp:issuedOn |
September 10, 1996
|
| gptkbp:legalStatus |
active
|
| gptkbp:maintenanceFee |
required
|
| gptkbp:numberOfClaims |
20
|
| gptkbp:numberOfFigures |
5
|
| gptkbp:patentFamily |
US_patent_family
|
| gptkbp:patentLength |
20 years
|
| gptkbp:patentStatus |
active
|
| gptkbp:patentType |
utility patent
|
| gptkbp:priorityDate |
June 7, 1995
|
| gptkbp:relatedTo |
energy efficiency
semiconductor manufacturing chemical vapor deposition high purity materials silicon purification |
| gptkbp:title |
Method for producing a high purity silicon
|