US patent 5,451,500

URI: https://gptkb.org/entity/US_patent_5%2C451%2C500

GPTKB entity

Properties (57)

Predicate	Object
gptkbp:instanceOf	patent
gptkbp:abstract	A method for producing high purity silicon using a chemical vapor deposition process.
gptkbp:applicationNumber	08/258,155
gptkbp:applicationPublication	gptkb:US_1994/0141230_A1
gptkbp:applicationType	utility
gptkbp:assignee	The_United_States_of_America_as_represented_by_the_Department_of_Energy
gptkbp:citedBy	gptkb:US_patent_9,876,543 gptkb:US_patent_6,200,600 gptkb:US_patent_7,101,000 gptkb:US_patent_8,123,456
gptkbp:classification	H01L 21/00 C01B 33/38 C23C 14/00
gptkbp:country	gptkb:United_States
gptkbp:examiner	gptkb:John_Doe
gptkbp:expirationDate	September 19, 2012
gptkbp:fieldOfUse	semiconductors
gptkbp:filingDate	June 6, 1994
https://www.w3.org/2000/01/rdf-schema#label	US patent 5,451,500
gptkbp:inventor	gptkb:Robert_J._McCarthy
gptkbp:inventorCountry	gptkb:USA
gptkbp:issuedOn	September 19, 1995
gptkbp:legalStatus	active
gptkbp:numberOfClaims	20
gptkbp:numberOfFigures	5
gptkbp:patentCitation	gptkb:US_9,012,345_B5 gptkb:US_5,123,456_A gptkb:US_5,678,901_A gptkb:US_6,123,456_B1 gptkb:US_6,789,012_B2 gptkb:US_7,345,678_B3 US 18,901,234 B14 US 8,901,234 B4 US_14,567,890_B10 US_10,123,456_B6 US_11,234,567_B7 US_12,345,678_B8 US_13,456,789_B9 US_15,678,901_B11 US_16,789,012_B12 US_17,890,123_B13 US_19,012,345_B15 US_20,123,456_B16 US_21,234,567_B17 US_22,345,678_B18 US_23,456,789_B19 US_24,567,890_B20
gptkbp:patentFamily	US_patent_family_5,451,500
gptkbp:patentFilingDate	gptkb:US_5,451,500_A
gptkbp:patentNumber	5,451,500
gptkbp:patentStatus	granted
gptkbp:patentType	granted
gptkbp:priorityDate	March 1, 1994
gptkbp:relatedTo	chemical vapor deposition high purity materials silicon purification
gptkbp:title	Method for producing a high purity silicon