Statements (28)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
transistor |
| gptkbp:abbreviation |
gptkb:FinFET
|
| gptkbp:advantage |
better scalability
higher drive current lower leakage current reduced short-channel effects |
| gptkbp:application |
high-performance computing
low-power electronics |
| gptkbp:commercialUse |
2011
|
| gptkbp:feature |
multiple gates
3D structure fin-shaped channel |
| gptkbp:firstCommercialUseBy |
gptkb:Intel
|
| https://www.w3.org/2000/01/rdf-schema#label |
fin field-effect transistor
|
| gptkbp:inventedBy |
gptkb:Hitachi
gptkb:Digh_Hisamoto |
| gptkbp:patent |
1990s
|
| gptkbp:relatedTo |
gptkb:battery
gptkb:trigate_transistor multigate device |
| gptkbp:replacedBy |
gptkb:planar_MOSFET
|
| gptkbp:usedIn |
microprocessors
integrated circuits memory chips 22nm process technology |
| gptkbp:bfsParent |
gptkb:FinFET
|
| gptkbp:bfsLayer |
6
|