Statements (23)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
transistor architecture
|
| gptkbp:enables |
lower power consumption
higher performance smaller transistor sizes scaling below 5nm |
| gptkbp:feature |
gate surrounds channel on all sides
|
| gptkbp:firstCommercializedBy |
gptkb:Samsung
|
| gptkbp:firstCommercializedIn |
2022
|
| https://www.w3.org/2000/01/rdf-schema#label |
GAAFET
|
| gptkbp:improves |
electrostatic control
|
| gptkbp:reduces |
short channel effects
|
| gptkbp:relatedTo |
nanosheet transistor
nanowire transistor |
| gptkbp:standsFor |
Gate-All-Around Field-Effect Transistor
|
| gptkbp:successor |
gptkb:FinFET
|
| gptkbp:usedBy |
gptkb:Samsung
gptkb:Intel gptkb:TSMC |
| gptkbp:usedIn |
semiconductor devices
integrated circuits 3nm process technology |
| gptkbp:bfsParent |
gptkb:FinFET
|
| gptkbp:bfsLayer |
6
|