Statements (23)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
transistor
|
| gptkbp:advantage |
lower power consumption
higher drive current |
| gptkbp:alsoKnownAs |
gptkb:FinFET
|
| gptkbp:announced |
Intel in 2011
|
| gptkbp:category |
multi-gate MOSFET
|
| gptkbp:contrastsWith |
planar transistor
|
| gptkbp:enables |
gptkb:Moore's_Law_scaling
smaller process nodes |
| gptkbp:fabricatedOn |
silicon substrate
|
| gptkbp:firstCommercializedBy |
gptkb:Intel
|
| gptkbp:hasChannel |
fin-shaped
|
| gptkbp:hasGate |
wraps around channel on three sides
|
| https://www.w3.org/2000/01/rdf-schema#label |
trigate transistor
|
| gptkbp:improves |
control over channel
|
| gptkbp:introducedIn |
gptkb:Intel_Ivy_Bridge_processors
|
| gptkbp:reduces |
leakage current
|
| gptkbp:structure |
three-dimensional gate
|
| gptkbp:usedFor |
logic circuits
memory circuits |
| gptkbp:usedIn |
advanced CMOS technology
|
| gptkbp:bfsParent |
gptkb:FinFET
|
| gptkbp:bfsLayer |
6
|