Statements (20)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
|
| gptkbp:advantage |
low cost
higher leakage current higher parasitic capacitance lower speed compared to SOI CMOS mature process technology |
| gptkbp:application |
analog circuits
digital logic circuits |
| gptkbp:contrastsWith |
SOI CMOS
|
| gptkbp:developedBy |
1970s
|
| gptkbp:dominantIn |
mainstream semiconductor manufacturing
|
| gptkbp:fabricationProcess |
uses p-type and n-type MOSFETs
|
| gptkbp:feature |
transistors built on silicon substrate
|
| https://www.w3.org/2000/01/rdf-schema#label |
bulk CMOS
|
| gptkbp:replacedBy |
FinFET in advanced nodes
|
| gptkbp:standsFor |
bulk complementary metal-oxide-semiconductor
|
| gptkbp:substrate |
bulk silicon
|
| gptkbp:usedIn |
integrated circuits
|
| gptkbp:bfsParent |
gptkb:FinFET
|
| gptkbp:bfsLayer |
6
|