|
gptkbp:instanceOf
|
two-dimensional material
transition metal dichalcogenide
|
|
gptkbp:bandGap
|
direct
|
|
gptkbp:bandGapValue
|
~1.8 eV
|
|
gptkbp:chemicalFormula
|
MoS2
|
|
gptkbp:consistsOf
|
gptkb:sulfur
molybdenum
|
|
gptkbp:crystalSystem
|
hexagonal
|
|
gptkbp:defectTypes
|
grain boundaries
sulfur vacancies
|
|
gptkbp:discoveredBy
|
gptkb:A._K._Geim
gptkb:K._S._Novoselov
|
|
gptkbp:discoveredIn
|
2010
|
|
gptkbp:edgeStates
|
present
|
|
gptkbp:environmentalStability
|
moderate
|
|
gptkbp:excitonBindingEnergy
|
high
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
monolayer MoS2
|
|
gptkbp:hydrogenEvolutionReaction
|
active
|
|
gptkbp:latticeConstant
|
~3.16 Å
|
|
gptkbp:level
|
1
|
|
gptkbp:mechanicalProperty
|
high strength
high flexibility
|
|
gptkbp:meltingPoint
|
~1185°C (bulk)
|
|
gptkbp:motility
|
~200 cm2/Vs
|
|
gptkbp:opticalProperties
|
strong photoluminescence
|
|
gptkbp:photocatalyticActivity
|
present
|
|
gptkbp:photoluminescencePeak
|
~1.85 eV
|
|
gptkbp:PoissonRatio
|
~0.25
|
|
gptkbp:RamanActiveModes
|
A1g
E2g
|
|
gptkbp:relatedMaterial
|
monolayer MoSe2
monolayer WS2
|
|
gptkbp:spinOrbitCoupling
|
strong
|
|
gptkbp:substrate
|
gptkb:jewelry
SiO2/Si
flexible polymers
|
|
gptkbp:surfaceTermination
|
gptkb:sulfur
|
|
gptkbp:symmetry
|
gptkb:D3h
|
|
gptkbp:synthesisType
|
chemical vapor deposition
mechanical exfoliation
liquid phase exfoliation
|
|
gptkbp:thermalConductivity
|
~34.5 W/mK
|
|
gptkbp:thickness
|
~0.65 nm
|
|
gptkbp:toxicity
|
low
|
|
gptkbp:usedIn
|
optoelectronics
photodetectors
flexible electronics
field-effect transistors
|
|
gptkbp:valleyPolarization
|
present
|
|
gptkbp:YoungsModulus
|
~270 GPa
|
|
gptkbp:bfsParent
|
gptkb:Valley_polarization
|
|
gptkbp:bfsLayer
|
7
|