Statements (23)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
semiconductor material
|
| gptkbp:bandGap |
direct bandgap
|
| gptkbp:bandGapEnergy |
0.75 eV (for In0.53Ga0.47As at 300K)
|
| gptkbp:category |
gptkb:III-V_semiconductor
compound semiconductor |
| gptkbp:chemicalFormula |
InxGa1−xAs
|
| gptkbp:containsElement |
gptkb:gallium
gptkb:poisoning indium |
| gptkbp:crystalSystem |
gptkb:zinc_blende
|
| gptkbp:discoveredIn |
1980s
|
| https://www.w3.org/2000/01/rdf-schema#label |
Indium gallium arsenide
|
| gptkbp:latticeConstant |
5.8687 Å (for In0.53Ga0.47As)
|
| gptkbp:meltingPoint |
1230 °C (approximate)
|
| gptkbp:usedFor |
fiber optic communication
night vision |
| gptkbp:usedIn |
photodetectors
optical communication laser diodes infrared detectors high-speed electronics |
| gptkbp:bfsParent |
gptkb:Photodiode
|
| gptkbp:bfsLayer |
7
|