Statements (33)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
musical composition |
| gptkbp:appearance |
gray
|
| gptkbp:bandGap |
direct
1.42 eV |
| gptkbp:CASNumber |
1303-00-0
|
| gptkbp:chemicalFormula |
gptkb:GaAs
|
| gptkbp:containsElement |
gptkb:Gallium
gptkb:Arsenic |
| gptkbp:crystalSystem |
gptkb:zinc_blende
|
| gptkbp:density |
5.32 g/cm³
|
| gptkbp:discoveredIn |
1920s
|
| gptkbp:electronMobility |
8500 cm²/(V·s)
|
| gptkbp:holeMobility |
400 cm²/(V·s)
|
| https://www.w3.org/2000/01/rdf-schema#label |
Gallium Arsenide
|
| gptkbp:latticeConstant |
5.653 Å
|
| gptkbp:meltingPoint |
1238 °C
|
| gptkbp:refractiveIndex |
3.3
|
| gptkbp:riskFactor |
carcinogenic potential
|
| gptkbp:solubility |
insoluble
|
| gptkbp:thermalConductivity |
0.46 W/(cm·K)
|
| gptkbp:toxicity |
toxic
|
| gptkbp:usedFor |
optoelectronics
high-frequency applications |
| gptkbp:usedIn |
LEDs
laser diodes solar cells high-speed electronics infrared light-emitting diodes microwave frequency integrated circuits monolithic microwave integrated circuits |
| gptkbp:bfsParent |
gptkb:Solar_Cell
|
| gptkbp:bfsLayer |
6
|