Statements (44)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
compound
|
| gptkbp:application |
optical devices
photodetectors high-frequency electronics microwave devices |
| gptkbp:characteristics |
low thermal conductivity
high electron mobility direct bandgap semiconductor high radiation resistance |
| gptkbp:chemicalFormula |
GaAs
|
| gptkbp:composedOf |
Hydride Vapor Phase Epitaxy
Liquid Phase Epitaxy Molecular_Beam_Epitaxy Metal-Organic_Chemical_Vapor_Deposition |
| gptkbp:constructionMaterial |
1.42 eV
|
| gptkbp:dissolved |
insoluble in water
|
| gptkbp:distribution |
5.32 g/cm³
|
| gptkbp:environmentalImpact |
0.46 W/(m·K)
recycling challenges 10^6 S/m toxic arsenic |
| gptkbp:established |
J._E._McCaldin
|
| gptkbp:hasFacilities |
144.64 g/mol
|
| https://www.w3.org/2000/01/rdf-schema#label |
Gallium Arsenide
|
| gptkbp:iceClass |
2500 °C
1238 °C |
| gptkbp:market |
LED technology
telecommunications industry defense applications growing solar energy sector high demand in electronics |
| gptkbp:material |
gptkb:Gallium_Phosphide
Aluminum Indium |
| gptkbp:relatedPatent |
gptkb:Indium_Gallium_Arsenide
gptkb:Gallium_Nitride Silicon Cadmium Telluride |
| gptkbp:releaseYear |
1952
|
| gptkbp:rootSystem |
zinc blende
|
| gptkbp:uses |
LEDs
semiconductors laser diodes solar cells |