Statements (28)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
aluminum alloy
semiconductor material |
| gptkbp:category |
group IV alloy
|
| gptkbp:composedOf |
silicon
germanium |
| gptkbp:crystalSystem |
diamond cubic
|
| gptkbp:discoveredIn |
1950s
|
| gptkbp:enables |
bandgap engineering
strain engineering in semiconductors |
| gptkbp:grownBy |
chemical vapor deposition
molecular beam epitaxy |
| gptkbp:hasBandgap |
1.12 eV to 0.66 eV (depending on Ge content)
|
| https://www.w3.org/2000/01/rdf-schema#label |
SiGe
|
| gptkbp:latticeConstant |
varies with Ge content
|
| gptkbp:symbol |
gptkb:SiGe
|
| gptkbp:usedFor |
gptkb:millimeter-wave_circuits
photodetectors infrared sensors low-noise amplifiers |
| gptkbp:usedIn |
gptkb:CMOS_technology
wireless communications radio frequency applications heterojunction bipolar transistors space electronics high-speed integrated circuits |
| gptkbp:bfsParent |
gptkb:Silicon-germanium
gptkb:millimeter-wave_circuits |
| gptkbp:bfsLayer |
7
|