Properties (45)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
transistor
|
| gptkbp:appearsIn |
telecommunications
consumer electronics military applications satellite communications |
| gptkbp:competesWith |
gptkb:bipolar_junction_transistor
gptkb:MOSFET |
| gptkbp:developedBy |
researchers in the 1980s
|
| gptkbp:hasAwards |
gptkb:MIL-STD
IEC standards ANSI standards CE marking REACH compliance JEDEC standards IEEE standards UL certification ISO_standards RoHS_compliance FCC_compliance |
| gptkbp:hasCharacter |
thermal stability
low noise wide bandgap high power density |
| gptkbp:hasContent |
high efficiency
high frequency operation costly fabrication |
| gptkbp:hasRelatedPatent |
5G technology
optical devices sensors microwave devices |
| gptkbp:hasResearchFocus |
cost reduction
performance optimization thermal management circuit design reliability testing device scaling packaging technology integration with other technologies material improvements |
| gptkbp:hasTouristAttraction |
gallium nitride
indium gallium arsenide |
| gptkbp:hasType |
high electron mobility transistor
|
| https://www.w3.org/2000/01/rdf-schema#label |
HEMT
|
| gptkbp:usedIn |
RF applications
power amplifiers |