Statements (25)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
transistor
|
| gptkbp:advantage |
lower input impedance than MOSFET
high electron mobility high-frequency performance higher noise compared to MOSFET |
| gptkbp:category |
transistor
|
| gptkbp:discoveredIn |
1960s
|
| gptkbp:gateType |
Schottky gate
|
| https://www.w3.org/2000/01/rdf-schema#label |
MESFET
|
| gptkbp:material |
gptkb:gallium_arsenide
silicon carbide |
| gptkbp:operates |
majority carriers
|
| gptkbp:relatedTo |
gptkb:JFET
HEMT |
| gptkbp:standsFor |
gptkb:Metal–Semiconductor_Field-Effect_Transistor
|
| gptkbp:usedIn |
radar systems
wireless communications satellite communications RF circuits microwave amplifiers high-frequency applications |
| gptkbp:bfsParent |
gptkb:ATF46C_series
gptkb:ATF91C_series gptkb:ATF93C_series |
| gptkbp:bfsLayer |
6
|