Statements (31)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
semiconductor material
III-V compound |
| gptkbp:alternativeName |
gptkb:Indium_gallium_arsenide
|
| gptkbp:bandGap |
direct
|
| gptkbp:bandGapEnergy |
0.75 eV (for In0.53Ga0.47As at 300K)
|
| gptkbp:category |
gptkb:microprocessor
aluminum alloy III-V material |
| gptkbp:chemicalFormula |
InxGa1−xAs
|
| gptkbp:containsElement |
gptkb:Gallium
gptkb:Arsenic gptkb:Indium |
| gptkbp:crystalSystem |
gptkb:zinc_blende
|
| gptkbp:discoveredIn |
1980s
|
| gptkbp:grownOn |
InP substrate
|
| https://www.w3.org/2000/01/rdf-schema#label |
InGaAs
|
| gptkbp:latticeConstant |
5.8687 Å (for In0.53Ga0.47As)
|
| gptkbp:motility |
high electron mobility
|
| gptkbp:relatedTo |
gptkb:InP
gptkb:GaAs |
| gptkbp:toxicity |
contains arsenic (toxic element)
|
| gptkbp:usedFor |
solar cells
quantum well devices telecommunications lasers |
| gptkbp:usedIn |
photodetectors
optical communication high-speed electronics infrared cameras |
| gptkbp:wavelengthRange |
0.9–1.7 μm (for photodetectors)
|
| gptkbp:bfsParent |
gptkb:GaAs_PHEMT
|
| gptkbp:bfsLayer |
7
|