high electron mobility transistors (HEMTs)
GPTKB entity
Statements (39)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
transistor
|
| gptkbp:alsoKnownAs |
heterostructure FET
modulation-doped FET |
| gptkbp:application |
wireless communications
cellular base stations power amplifiers low-noise amplifiers |
| gptkbp:category |
gptkb:microprocessor
transistor microwave technology |
| gptkbp:feature |
gptkb:two-dimensional_electron_gas_(2DEG)
low power consumption low noise high-speed switching high frequency operation high gain high linearity high electron mobility high breakdown voltage |
| https://www.w3.org/2000/01/rdf-schema#label |
high electron mobility transistors (HEMTs)
|
| gptkbp:inventedBy |
gptkb:Takashi_Mimura
1980 |
| gptkbp:material |
gptkb:aluminum_gallium_arsenide_(AlGaAs)
gptkb:gallium_arsenide_(GaAs) gptkb:indium_phosphide_(InP) gallium nitride (GaN) |
| gptkbp:operatesIn |
GHz frequencies
|
| gptkbp:relatedTo |
gptkb:battery
gptkb:MESFET gptkb:JFET |
| gptkbp:structure |
heterojunction
|
| gptkbp:usedIn |
radar systems
satellite communications RF circuits high-speed digital circuits microwave amplifiers |
| gptkbp:bfsParent |
gptkb:Heterojunctions_in_Semiconductors
gptkb:Gallium_Nitride_(GaN) |
| gptkbp:bfsLayer |
6
|