high electron mobility transistors (HEMTs)

URI: https://gptkb.org/entity/high_electron_mobility_transistors_(HEMTs)
GPTKB entity
Statements (38)
Predicate Object
gptkbp:instanceOf gptkb:transistor
gptkbp:alsoKnownAs heterostructure FET
modulation-doped FET
gptkbp:application wireless communications
cellular base stations
power amplifiers
low-noise amplifiers
gptkbp:category gptkb:microprocessor
gptkb:transistor
microwave technology
gptkbp:feature gptkb:two-dimensional_electron_gas_(2DEG)
low power consumption
low noise
high-speed switching
high frequency operation
high gain
high linearity
high electron mobility
high breakdown voltage
gptkbp:inventedBy gptkb:Takashi_Mimura
1980
gptkbp:material gptkb:aluminum_gallium_arsenide_(AlGaAs)
gptkb:gallium_arsenide_(GaAs)
gptkb:indium_phosphide_(InP)
gallium nitride (GaN)
gptkbp:operatesIn GHz frequencies
gptkbp:relatedTo gptkb:battery
gptkb:MESFET
gptkb:JFET
gptkbp:structure gptkb:heterojunction
gptkbp:usedIn radar systems
satellite communications
RF circuits
high-speed digital circuits
microwave amplifiers
gptkbp:bfsParent gptkb:Gallium_Nitride_(GaN)
gptkbp:bfsLayer 6
https://www.w3.org/2000/01/rdf-schema#label high electron mobility transistors (HEMTs)