|
gptkbp:instanceOf
|
gptkb:musical_composition
gptkb:microprocessor
|
|
gptkbp:appearance
|
gray-black crystalline solid
|
|
gptkbp:bandGap
|
direct
1.42 eV
|
|
gptkbp:CASNumber
|
1303-00-0
|
|
gptkbp:chemicalFormula
|
gptkb:GaAs
|
|
gptkbp:containsElement
|
gptkb:gallium
gptkb:poisoning
|
|
gptkbp:crystalSystem
|
gptkb:zinc_blende
|
|
gptkbp:density
|
5.32 g/cm³
|
|
gptkbp:discoveredBy
|
gptkb:Paul-Émile_Lecoq_de_Boisbaudran
|
|
gptkbp:discoveredIn
|
1875
|
|
gptkbp:EC_number
|
215-114-8
|
|
gptkbp:electronMobility
|
8500 cm²/(V·s)
|
|
gptkbp:holeMobility
|
400 cm²/(V·s)
|
|
gptkbp:meltingPoint
|
1238 °C
|
|
gptkbp:molecularWeight
|
144.64 g/mol
|
|
gptkbp:PubChem_CID
|
516922
|
|
gptkbp:refractiveIndex
|
3.3
|
|
gptkbp:riskFactor
|
H350 (may cause cancer)
|
|
gptkbp:solubility
|
insoluble
|
|
gptkbp:thermalConductivity
|
0.46 W/(cm·K)
|
|
gptkbp:toxicity
|
toxic
|
|
gptkbp:usedIn
|
LEDs
laser diodes
solar cells
high-speed electronics
infrared light-emitting diodes
microwave circuits
|
|
gptkbp:bfsParent
|
gptkb:high_electron_mobility_transistors_(HEMTs)
|
|
gptkbp:bfsLayer
|
7
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
gallium arsenide (GaAs)
|