two-dimensional electron gas (2DEG)
GPTKB entity
Statements (27)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
physical phenomenon
quantum system |
| gptkbp:application |
gptkb:quantum_computing
nanoelectronics |
| gptkbp:carrierDensity |
variable
|
| gptkbp:charge |
electron
|
| gptkbp:confinement |
quantum confinement
|
| gptkbp:createdBy |
gptkb:modulation_doping
interface engineering |
| gptkbp:dimensions |
two
|
| gptkbp:enables |
gptkb:Shubnikov–de_Haas_effect
gptkb:quantum_Hall_effect gptkb:fractional_quantum_Hall_effect gptkb:high_electron_mobility_transistors_(HEMTs) spintronics |
| gptkbp:firstObserved |
1970s
|
| gptkbp:foundIn |
semiconductor heterostructures
quantum wells oxide interfaces |
| https://www.w3.org/2000/01/rdf-schema#label |
two-dimensional electron gas (2DEG)
|
| gptkbp:material |
GaAs/AlGaAs heterostructure
LaAlO3/SrTiO3 interface |
| gptkbp:motility |
high
|
| gptkbp:studiedIn |
condensed matter physics
|
| gptkbp:temperature |
low temperature
|
| gptkbp:bfsParent |
gptkb:high_electron_mobility_transistors_(HEMTs)
|
| gptkbp:bfsLayer |
7
|