Statements (22)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
semiconductor material
|
| gptkbp:bandGap |
direct band gap
|
| gptkbp:composedOf |
group III element
group V element |
| gptkbp:crystalSystem |
gptkb:zinc_blende
gptkb:wurtzite |
| gptkbp:discoveredIn |
20th century
|
| gptkbp:example |
gptkb:indium_phosphide
gptkb:gallium_arsenide gptkb:gallium_nitride gptkb:aluminum_arsenide |
| https://www.w3.org/2000/01/rdf-schema#label |
III-V semiconductors
|
| gptkbp:notableFor |
high thermal conductivity
high electron mobility high frequency performance |
| gptkbp:usedIn |
LEDs
laser diodes solar cells high-speed electronics |
| gptkbp:bfsParent |
gptkb:Molecular_Beam_Epitaxy
gptkb:Heinrich_Welker |
| gptkbp:bfsLayer |
6
|