Statements (51)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
class of semiconductors
|
| gptkbp:bandGap |
direct band gap
indirect band gap |
| gptkbp:composedOf |
group II elements
group VI elements |
| gptkbp:crystalSystem |
gptkb:salt
gptkb:zinc_blende gptkb:wurtzite |
| gptkbp:discoveredIn |
20th century
|
| gptkbp:dopant |
gptkb:transition_metals
rare earth elements |
| gptkbp:example |
gptkb:CdSe
gptkb:ZnS gptkb:CdTe gptkb:HgSe gptkb:HgTe gptkb:ZnSe gptkb:ZnTe HgS CdS |
| https://www.w3.org/2000/01/rdf-schema#label |
II-VI semiconductors
|
| gptkbp:market |
semiconductor industry
|
| gptkbp:property |
photoconductivity
high electron mobility high optical absorption wide band gap |
| gptkbp:relatedTo |
gptkb:III-V_semiconductors
IV semiconductors |
| gptkbp:researchArea |
materials science
solid-state physics |
| gptkbp:synthesisType |
chemical vapor deposition
molecular beam epitaxy hydrothermal synthesis solution growth |
| gptkbp:toxicity |
some are toxic (e.g., Cd, Hg compounds)
|
| gptkbp:usedFor |
gptkb:thin-film_transistors
quantum dots infrared detectors photovoltaics terahertz devices X-ray detectors blue and green LEDs transparent conducting films |
| gptkbp:usedIn |
lasers
optoelectronics photodetectors solar cells light-emitting diodes |
| gptkbp:bfsParent |
gptkb:Molecular_Beam_Epitaxy
gptkb:III-V_semiconductor |
| gptkbp:bfsLayer |
6
|