Statements (53)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
chemical vapor deposition technique
|
| gptkbp:advantage |
high cost
scalability precise composition control high uniformity toxic precursors complex process control |
| gptkbp:alternativeName |
MOVPE
|
| gptkbp:category |
thin film deposition
semiconductor manufacturing process epitaxy |
| gptkbp:depot |
gptkb:II-VI_semiconductors
gptkb:III-V_semiconductors oxides nitrides |
| gptkbp:fullName |
gptkb:Metalorganic_Chemical_Vapor_Deposition
|
| https://www.w3.org/2000/01/rdf-schema#label |
MOCVD
|
| gptkbp:inventedBy |
gptkb:Harold_M._Manasevit
1960s |
| gptkbp:keyMaterials |
gptkb:indium_phosphide
gptkb:gallium_arsenide gptkb:gallium_nitride silicon carbide aluminum gallium arsenide zinc selenide |
| gptkbp:notableFor |
production of high electron mobility transistors (HEMTs)
production of blue LEDs |
| gptkbp:operatesIn |
high temperature
|
| gptkbp:precursors |
hydrides
gaseous reactants metalorganic compounds |
| gptkbp:processor |
chemical vapor deposition
|
| gptkbp:relatedTo |
gptkb:MBE
gptkb:CVD ALD |
| gptkbp:requires |
exhaust gas treatment
precursor delivery systems specialized reactors |
| gptkbp:substrate |
gptkb:jewelry
gptkb:gallium_arsenide silicon silicon carbide |
| gptkbp:usedBy |
semiconductor industry
research laboratories optoelectronics industry |
| gptkbp:usedFor |
semiconductor fabrication
LED manufacturing laser diode fabrication epitaxial growth of thin films solar cell production |
| gptkbp:bfsParent |
gptkb:Metal-Organic_CVD_(MOCVD)
gptkb:metalorganic_chemical_vapor_deposition |
| gptkbp:bfsLayer |
7
|