Statements (22)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
crystal growth technique
|
| gptkbp:alternativeTo |
molecular beam epitaxy
liquid phase epitaxy |
| gptkbp:appliesTo |
gptkb:III-V_semiconductors
silicon wafers gallium arsenide wafers |
| gptkbp:controlledBy |
gptkb:temperature
pressure gas flow rate |
| gptkbp:developedBy |
1960s
|
| gptkbp:enables |
controlled doping
high purity crystal growth |
| https://www.w3.org/2000/01/rdf-schema#label |
vapor phase epitaxy
|
| gptkbp:produces |
thin films
|
| gptkbp:relatedTo |
chemical vapor deposition
|
| gptkbp:requires |
high temperature
reactor chamber |
| gptkbp:usedFor |
semiconductor fabrication
epitaxial layer growth |
| gptkbp:uses |
gaseous precursors
|
| gptkbp:bfsParent |
gptkb:Metal-Organic_CVD_(MOCVD)
|
| gptkbp:bfsLayer |
7
|