Statements (52)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
transistor
power semiconductor device |
| gptkbp:advantage |
Si MOSFET
|
| gptkbp:application |
electric vehicles
power supplies power electronics renewable energy systems motor drives |
| gptkbp:contrastsWith |
Si MOSFET
|
| gptkbp:feature |
robustness
high temperature operation improved reliability high efficiency fast switching speed ruggedness high voltage capability high thermal conductivity low switching losses high breakdown electric field higher frequency operation lower conduction losses lower cooling requirements lower gate charge lower on-resistance reduced system cost reduced system size smaller device size |
| gptkbp:fullName |
Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor
|
| https://www.w3.org/2000/01/rdf-schema#label |
SiC MOSFET
|
| gptkbp:material |
silicon carbide
|
| gptkbp:usedBy |
gptkb:Tesla
gptkb:STMicroelectronics gptkb:ON_Semiconductor gptkb:Wolfspeed gptkb:Infineon_Technologies gptkb:Littelfuse ROHM Semiconductor |
| gptkbp:usedIn |
data centers
charging stations aerospace applications railway traction energy storage systems solar inverters DC-DC converters inverters uninterruptible power supplies industrial power supplies on-board chargers server power supplies traction drives |
| gptkbp:bfsParent |
gptkb:transistor
|
| gptkbp:bfsLayer |
4
|