Silicon Controlled Rectifier
GPTKB entity
Statements (49)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
|
| gptkbp:abbreviation |
gptkb:SCR
|
| gptkbp:application |
battery chargers
HVDC transmission crowbar circuits inverter circuits phase control solid-state relays welding machines |
| gptkbp:category |
power semiconductor devices
|
| gptkbp:controlledBy |
gate current
|
| gptkbp:failureMode |
breakdown
latch-up thermal runaway |
| gptkbp:feature |
robustness
fast switching four-layer structure high current capability high voltage capability latching behavior low on-state voltage drop |
| gptkbp:hasTerminal |
gate
anode cathode |
| gptkbp:hasType |
thyristor
|
| https://www.w3.org/2000/01/rdf-schema#label |
Silicon Controlled Rectifier
|
| gptkbp:inventedBy |
gptkb:Bell_Labs
1957 |
| gptkbp:marketedAs |
gptkb:General_Electric
|
| gptkbp:material |
silicon
|
| gptkbp:polarization |
unidirectional
|
| gptkbp:relatedTo |
gptkb:IGBT
transistor GTO thyristor triac |
| gptkbp:standardizedBy |
gptkb:JEDEC
|
| gptkbp:structure |
PNPN
|
| gptkbp:symbol |
SCR symbol
|
| gptkbp:turnOffMethod |
anode current reduction
|
| gptkbp:turnOnMethod |
gate triggering
|
| gptkbp:usedFor |
switching
rectification controlling power |
| gptkbp:usedIn |
power electronics
motor control overvoltage protection light dimmers |
| gptkbp:bfsParent |
gptkb:SCR
|
| gptkbp:bfsLayer |
5
|