Chemical Vapor Deposition technique
GPTKB entity
Statements (41)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
Deposition technique
|
| gptkbp:advantage |
scalability
complex equipment good step coverage high temperature requirement toxic precursors |
| gptkbp:alsoKnownAs |
gptkb:CVD
|
| gptkbp:appliesTo |
gptkb:ceramics
metals silicon wafers |
| gptkbp:canBeDeployedOn |
gptkb:jewelry
gptkb:silicon_dioxide gptkb:silicon_nitride graphene tungsten carbon nanotubes |
| gptkbp:enables |
conformal coatings
high purity films uniform thickness |
| https://www.w3.org/2000/01/rdf-schema#label |
Chemical Vapor Deposition technique
|
| gptkbp:inventedBy |
1960s
|
| gptkbp:involves |
chemical reactions
gaseous precursors |
| gptkbp:operatesIn |
elevated temperatures
|
| gptkbp:processor |
gptkb:chemical_compound
|
| gptkbp:result |
solid material deposition
|
| gptkbp:usedFor |
thin film deposition
semiconductor fabrication coating production nanomaterial synthesis solar cell manufacturing |
| gptkbp:usedIn |
microelectronics
optical coatings MEMS fabrication tool coatings |
| gptkbp:variant |
gptkb:Metalorganic_Chemical_Vapor_Deposition
gptkb:Atmospheric_Pressure_Chemical_Vapor_Deposition Low Pressure Chemical Vapor Deposition Plasma Enhanced Chemical Vapor Deposition |
| gptkbp:bfsParent |
gptkb:Atmospheric_Pressure_CVD_(APCVD)
|
| gptkbp:bfsLayer |
7
|