Statements (31)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
chemical vapor deposition technique
|
| gptkbp:abbreviation |
Plasma Enhanced Chemical Vapor Deposition
|
| gptkbp:advantage |
good step coverage
conformal films compatibility with temperature-sensitive substrates |
| gptkbp:category |
thin film deposition method
|
| gptkbp:depot |
gptkb:amorphous_silicon
gptkb:silicon_dioxide gptkb:silicon_nitride silicon oxynitride carbon-based films |
| gptkbp:enables |
lower temperature deposition
|
| https://www.w3.org/2000/01/rdf-schema#label |
Plasma Enhanced CVD (PECVD)
|
| gptkbp:inventedBy |
1970s
|
| gptkbp:limitation |
film quality may be lower than thermal CVD
possible plasma-induced damage |
| gptkbp:operatesIn |
lower temperatures than thermal CVD
|
| gptkbp:relatedTo |
gptkb:Atomic_Layer_Deposition_(ALD)
gptkb:Low_Pressure_CVD_(LPCVD) |
| gptkbp:usedFor |
thin film deposition
semiconductor fabrication solar cell manufacturing coating applications |
| gptkbp:usedIn |
microelectronics
photovoltaics MEMS fabrication |
| gptkbp:uses |
microwave plasma
plasma to enhance chemical reactions radio frequency (RF) plasma |
| gptkbp:bfsParent |
gptkb:Atmospheric_Pressure_CVD_(APCVD)
|
| gptkbp:bfsLayer |
7
|