Atmospheric Pressure Chemical Vapor Deposition
GPTKB entity
Statements (23)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:Chemical_Vapor_Deposition_technique
|
| gptkbp:abbreviation |
APCVD
|
| gptkbp:advantage |
high deposition rate
lower film quality compared to LPCVD less uniformity simple equipment |
| gptkbp:depot |
gptkb:silicon_dioxide
gptkb:polysilicon gptkb:silicon_nitride |
| https://www.w3.org/2000/01/rdf-schema#label |
Atmospheric Pressure Chemical Vapor Deposition
|
| gptkbp:operatesIn |
atmospheric pressure
|
| gptkbp:precursorState |
gptkb:gasoline
|
| gptkbp:processor |
thermal process
|
| gptkbp:relatedTo |
Low Pressure Chemical Vapor Deposition
Plasma Enhanced Chemical Vapor Deposition |
| gptkbp:requires |
substrate heating
reactant gases |
| gptkbp:usedFor |
thin film deposition
|
| gptkbp:usedIn |
semiconductor manufacturing
solar cell fabrication glass coating |
| gptkbp:bfsParent |
gptkb:Atmospheric_Pressure_CVD_(APCVD)
|
| gptkbp:bfsLayer |
7
|