Statements (29)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
chemical vapor deposition technique
|
| gptkbp:abbreviation |
Low Pressure Chemical Vapor Deposition
|
| gptkbp:advantage |
good step coverage
high temperature process lower deposition rate uniform film thickness |
| gptkbp:depot |
gptkb:silicon_dioxide
gptkb:polysilicon gptkb:silicon_nitride |
| https://www.w3.org/2000/01/rdf-schema#label |
Low Pressure CVD (LPCVD)
|
| gptkbp:minimumPressure |
0.1-1 Torr
|
| gptkbp:operatesIn |
reduced pressure
|
| gptkbp:precursorGas |
ammonia
silane dichlorosilane |
| gptkbp:relatedTo |
gptkb:Atmospheric_Pressure_CVD_(APCVD)
gptkb:Plasma_Enhanced_CVD_(PECVD) |
| gptkbp:temperature |
500-900°C
|
| gptkbp:usedFor |
thin film deposition
barrier layer deposition dielectric layer deposition diffusion source deposition gate oxide formation |
| gptkbp:usedIn |
semiconductor manufacturing
MEMS fabrication solar cell manufacturing integrated circuit fabrication |
| gptkbp:bfsParent |
gptkb:Atmospheric_Pressure_CVD_(APCVD)
|
| gptkbp:bfsLayer |
7
|