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gptkbp:instanceOf
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gptkb:microprocessor
transistor
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gptkbp:abbreviation
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NMOS
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gptkbp:advantage
|
low power consumption
high speed
high input impedance
susceptible to static discharge
requires careful handling
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gptkbp:controlledBy
|
gate voltage
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gptkbp:fabricatedWith
|
silicon
silicon dioxide gate oxide
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gptkbp:hasApplication
|
microprocessors
integrated circuits
power electronics
memory chips
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gptkbp:hasChannel
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n-type channel
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gptkbp:hasChannelFormation
|
inversion layer
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gptkbp:hasCurrentFlow
|
from drain to source
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gptkbp:hasDepletionMode
|
yes
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gptkbp:hasEnhancementMode
|
yes
|
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gptkbp:hasGateControl
|
electric field
|
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gptkbp:hasGateInsulator
|
oxide layer
|
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gptkbp:hasMajorityCarrier
|
electron
|
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gptkbp:hasStandardPackage
|
gptkb:SOT-23
gptkb:TO-220
DPAK
|
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gptkbp:hasSubstrateType
|
p-type substrate
|
|
gptkbp:hasTerminal
|
gate
body
source
drain
|
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gptkbp:hasThresholdVoltage
|
positive
|
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gptkbp:hasType
|
gptkb:n-channel_MOSFET
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
n-type MOSFET
|
|
gptkbp:inventedBy
|
gptkb:Dawon_Kahng
gptkb:Martin_M._Atalla
1959
|
|
gptkbp:operates
|
voltage-controlled device
|
|
gptkbp:polarization
|
n-type
|
|
gptkbp:relatedTo
|
gptkb:battery
gptkb:p-type_MOSFET
transistor
|
|
gptkbp:symbol
|
standard MOSFET symbol with arrow out
|
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gptkbp:usedFor
|
amplification
switching
|
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gptkbp:usedIn
|
gptkb:CMOS_technology
digital circuits
analog circuits
|
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gptkbp:bfsParent
|
gptkb:Complementary_Metal-Oxide-Semiconductor
|
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gptkbp:bfsLayer
|
6
|