Statements (32)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
transistor
|
| gptkbp:abbreviation |
p-type metal–oxide–semiconductor field-effect transistor
|
| gptkbp:category |
gptkb:microprocessor
|
| gptkbp:complement |
gptkb:n-type_MOSFET
|
| gptkbp:controlledBy |
gate voltage
|
| gptkbp:hasApplication |
logic gates
switches amplifiers |
| gptkbp:hasChannel |
p-type
|
| gptkbp:hasGateMaterial |
gptkb:polysilicon
metal |
| gptkbp:hasInsulator |
gptkb:silicon_dioxide
|
| gptkbp:hasMajorityCarrier |
hole
|
| gptkbp:hasSourceDrainType |
p-type region
|
| gptkbp:hasSubstrateType |
n-type substrate
|
| gptkbp:hasTerminal |
gate
body source drain |
| https://www.w3.org/2000/01/rdf-schema#label |
p-type MOSFET
|
| gptkbp:inventedBy |
gptkb:Dawon_Kahng
gptkb:Martin_M._Atalla 1960 |
| gptkbp:polarization |
p-type
|
| gptkbp:symbol |
gptkb:PMOS
|
| gptkbp:turnsOffWhen |
gate voltage is higher than source
|
| gptkbp:turnsOnWhen |
gate voltage is lower than source
|
| gptkbp:usedIn |
gptkb:CMOS_technology
digital circuits analog circuits |
| gptkbp:bfsParent |
gptkb:Complementary_Metal-Oxide-Semiconductor
|
| gptkbp:bfsLayer |
6
|