Statements (53)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:logic
|
| gptkbp:advantage |
higher density integration
lower power consumption than TTL slower switching speed (historically) |
| gptkbp:contrastsWith |
gptkb:NMOS_logic
TTL logic |
| gptkbp:feature |
high noise immunity
low static power consumption high input impedance bidirectional operation can be fabricated at small geometries compatibility with VLSI dominant logic family in modern electronics high packing density low output impedance low static power dissipation rail-to-rail output scalability with Moore's Law static power only consumed during switching susceptible to latch-up |
| https://www.w3.org/2000/01/rdf-schema#label |
CMOS logic
|
| gptkbp:introducedIn |
1963
|
| gptkbp:inventedBy |
gptkb:Frank_Wanlass
|
| gptkbp:logicGateType |
gptkb:AND_gate
gptkb:OR_gate gptkb:XNOR_gate gptkb:XOR_gate NAND gate NOR gate inverter |
| gptkbp:material |
silicon
|
| gptkbp:standsFor |
Complementary Metal-Oxide-Semiconductor logic
|
| gptkbp:technology |
gptkb:CMOS
|
| gptkbp:usedFor |
analog circuits
digital logic circuits |
| gptkbp:usedIn |
embedded systems
microcontrollers microprocessors watches laptops smartphones FPGA integrated circuits digital signal processors ASICs memory chips image sensors battery-powered devices portable electronics |
| gptkbp:usesTransistorType |
gptkb:n-type_MOSFET
gptkb:p-type_MOSFET |
| gptkbp:bfsParent |
gptkb:Transistor-Transistor_Logic
|
| gptkbp:bfsLayer |
6
|