Complementary Metal-Oxide-Semiconductor
GPTKB entity
Statements (48)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
|
| gptkbp:abbreviation |
gptkb:CMOS
|
| gptkbp:application |
mixed-signal integrated circuits
analog integrated circuits digital integrated circuits |
| gptkbp:category |
electronics
semiconductors digital electronics integrated circuits |
| gptkbp:component |
gptkb:battery
gptkb:n-type_MOSFET gptkb:p-type_MOSFET |
| gptkbp:fabricationProcess |
photolithography
|
| gptkbp:feature |
scalability
high density of logic functions high noise immunity low static power consumption |
| https://www.w3.org/2000/01/rdf-schema#label |
Complementary Metal-Oxide-Semiconductor
|
| gptkbp:inventedBy |
gptkb:Frank_Wanlass
1963 |
| gptkbp:property |
low static power consumption
high integration density high switching speed low cost per function low heat generation scalable technology |
| gptkbp:relatedTo |
gptkb:battery
gptkb:VLSI gptkb:Moore's_Law semiconductor industry IC fabrication |
| gptkbp:replacedBy |
gptkb:NMOS_logic
gptkb:PMOS_logic |
| gptkbp:usedFor |
medical devices
watches laptops smartphones digital cameras battery-powered devices portable electronics |
| gptkbp:usedIn |
gptkb:static_RAM
microcontrollers microprocessors analog circuits image sensors digital logic circuits |
| gptkbp:bfsParent |
gptkb:CMOS
|
| gptkbp:bfsLayer |
5
|