metal–oxide–semiconductor field-effect transistor
GPTKB entity
Statements (48)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
transistor
|
| gptkbp:abbreviation |
gptkb:battery
|
| gptkbp:advantage |
low power consumption
scalability gate oxide breakdown high input impedance susceptibility to static discharge |
| gptkbp:application |
microprocessors
power electronics memory chips |
| gptkbp:category |
gptkb:microprocessor
transistor |
| gptkbp:dominantIn |
modern electronics
|
| gptkbp:enables |
gptkb:Moore's_law
scaling of integrated circuits |
| gptkbp:hasComponent |
gate
source substrate drain oxide layer |
| https://www.w3.org/2000/01/rdf-schema#label |
metal–oxide–semiconductor field-effect transistor
|
| gptkbp:introducedIn |
1959
|
| gptkbp:inventedBy |
gptkb:Dawon_Kahng
gptkb:Martin_M._Atalla |
| gptkbp:massProductionStartYear |
1960s
|
| gptkbp:material |
gptkb:silicon_dioxide
silicon |
| gptkbp:relatedTo |
gptkb:CMOS
gptkb:JFET transistor |
| gptkbp:subspecies |
gptkb:battery
gptkb:FinFET gptkb:depletion-mode_MOSFET gptkb:enhancement-mode_MOSFET gptkb:planar_MOSFET vertical MOSFET superjunction MOSFET IGBT (insulated-gate bipolar transistor) double-gate MOSFET lateral MOSFET trench-gate MOSFET |
| gptkbp:type |
n-channel
p-channel |
| gptkbp:usedIn |
digital circuits
integrated circuits analog circuits |
| gptkbp:bfsParent |
gptkb:Martin_M._Atalla
|
| gptkbp:bfsLayer |
7
|