Statements (51)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
Crystal growth technique
|
| gptkbp:abbreviation |
gptkb:MBE
|
| gptkbp:advantage |
High cost
Low throughput Precise control of composition Sharp interfaces |
| gptkbp:appliesTo |
gptkb:Optoelectronics
gptkb:Spintronics High electron mobility transistors Laser diodes Magnetic semiconductors Photodetectors Solar cells |
| gptkbp:characterizedBy |
High purity films
Layer-by-layer growth Slow growth rates |
| gptkbp:enables |
Abrupt interfaces
Atomic layer control Precise doping |
| https://www.w3.org/2000/01/rdf-schema#label |
Molecular Beam Epitaxy
|
| gptkbp:inventedBy |
gptkb:Alfred_Y._Cho
gptkb:John_R._Arthur 1968 |
| gptkbp:monitors |
gptkb:Reflection_high-energy_electron_diffraction
|
| gptkbp:operates |
Ultra-high vacuum
|
| gptkbp:produces |
gptkb:Quantum_dots
Multilayer structures Nanostructures Single crystal films |
| gptkbp:relatedTo |
gptkb:Liquid_Phase_Epitaxy
Chemical Vapor Deposition |
| gptkbp:requires |
Precise temperature control
Source materials Vacuum systems |
| gptkbp:usedFor |
gptkb:Graphene
gptkb:II-VI_semiconductors gptkb:III-V_semiconductors gptkb:Topological_insulators 2D materials Epitaxial growth of thin films Heterostructures Oxide materials Quantum well structures Semiconductor fabrication Superconductors Superlattices |
| gptkbp:uses |
Effusion cells
Molecular beams Substrate heating |
| gptkbp:bfsParent |
gptkb:Atomic_Layer_Epitaxy
|
| gptkbp:bfsLayer |
5
|