Statements (27)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
Crystal growth technique
|
| gptkbp:abbreviation |
gptkb:LPE
|
| gptkbp:advantage |
low defect density
high crystal quality |
| gptkbp:category |
gptkb:Epitaxy
Materials science Semiconductor technology |
| gptkbp:developedBy |
1960s
|
| https://www.w3.org/2000/01/rdf-schema#label |
Liquid Phase Epitaxy
|
| gptkbp:involves |
cooling solution to precipitate crystal
dissolving material in a solvent |
| gptkbp:limitation |
limited thickness control
not suitable for complex structures |
| gptkbp:relatedTo |
gptkb:Molecular_Beam_Epitaxy
gptkb:Metalorganic_Chemical_Vapor_Deposition |
| gptkbp:substrate |
gptkb:indium_phosphide
gptkb:gallium_arsenide silicon |
| gptkbp:usedFor |
photodetectors
laser diodes solar cells semiconductor fabrication optoelectronic devices LED production growing thin films |
| gptkbp:bfsParent |
gptkb:Molecular_Beam_Epitaxy
|
| gptkbp:bfsLayer |
6
|