Statements (50)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
thin film deposition technique
|
| gptkbp:abbreviation |
gptkb:ALE
|
| gptkbp:advantage |
high conformality on 3D structures
low temperature processing precise composition control |
| gptkbp:alsoKnownAs |
gptkb:Atomic_Layer_Deposition
|
| gptkbp:appliesTo |
gptkb:technology
integrated circuits solar cells energy storage devices |
| gptkbp:countryOfOrigin |
gptkb:Finland
|
| gptkbp:cycle |
alternating precursor pulses
purge steps |
| gptkbp:depot |
metals
semiconductors sulfides oxides nitrides |
| gptkbp:enables |
atomic-scale thickness control
conformal coatings high-quality thin films |
| gptkbp:features |
scalability
excellent uniformity low defect density precise thickness control |
| https://www.w3.org/2000/01/rdf-schema#label |
Atomic Layer Epitaxy
|
| gptkbp:inventedBy |
gptkb:Tuomo_Suntola
1970s |
| gptkbp:limitation |
precursor availability
slow deposition rate thermal budget constraints |
| gptkbp:notableFor |
photovoltaics
MEMS/NEMS devices barrier layers battery electrodes catalyst supports gate oxides high-k dielectrics in CMOS passivation layers protective coatings |
| gptkbp:processor |
sequential, self-limiting surface reactions
|
| gptkbp:relatedTo |
gptkb:Molecular_Beam_Epitaxy
Chemical Vapor Deposition |
| gptkbp:usedFor |
gptkb:nanotechnology
microelectronics semiconductor fabrication |
| gptkbp:uses |
surface reactions
precursor gases |
| gptkbp:bfsParent |
gptkb:Tuomo_Suntola
|
| gptkbp:bfsLayer |
4
|