Metal–Semiconductor Field-Effect Transistor
GPTKB entity
Statements (27)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
Field-effect transistor
|
| gptkbp:abbreviation |
gptkb:MESFET
|
| gptkbp:category |
gptkb:microprocessor
transistor |
| gptkbp:gateType |
Schottky (metal–semiconductor) junction
|
| gptkbp:hasComponent |
gptkb:Schottky_barrier
gate source drain |
| https://www.w3.org/2000/01/rdf-schema#label |
Metal–Semiconductor Field-Effect Transistor
|
| gptkbp:inventedBy |
1966
Carlo Canali Francois G. B. Baccarani |
| gptkbp:material |
gptkb:indium_phosphide
gptkb:gallium_arsenide silicon |
| gptkbp:principle |
voltage-controlled current source
|
| gptkbp:relatedTo |
gptkb:battery
gptkb:JFET HEMT |
| gptkbp:usedIn |
gptkb:RF_amplifiers
high-speed digital circuits microwave frequency applications |
| gptkbp:YouTubeChannel |
p-type
n-type |
| gptkbp:bfsParent |
gptkb:MESFET
|
| gptkbp:bfsLayer |
7
|