Statements (30)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
physical phenomenon
semiconductor device concept |
| gptkbp:affects |
charge carrier transport
|
| gptkbp:canBe |
ohmic
rectifying |
| gptkbp:characterizedBy |
barrier height
|
| gptkbp:dependsOn |
electron affinity of semiconductor
work function of metal |
| gptkbp:describes |
potential energy barrier for electrons
|
| https://www.w3.org/2000/01/rdf-schema#label |
Schottky barrier
|
| gptkbp:influenced |
rectifying behavior
|
| gptkbp:namedAfter |
gptkb:Walter_H._Schottky
|
| gptkbp:occurredIn |
interface between metal and semiconductor
|
| gptkbp:relatedTo |
thermionic emission
tunneling contact resistance Fermi level pinning band bending depletion region metal-semiconductor junction |
| gptkbp:studiedIn |
electronic engineering
solid-state physics |
| gptkbp:usedIn |
semiconductor devices
photodetectors solar cells Schottky diode |
| gptkbp:bfsParent |
gptkb:Friedrich_Schottky
gptkb:Walter_Schottky gptkb:Schottky_Diodes |
| gptkbp:bfsLayer |
6
|