Metalorganic Chemical Vapor Deposition
GPTKB entity
Statements (33)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
thin film deposition technique
|
| gptkbp:abbreviation |
gptkb:MOCVD
|
| gptkbp:alternativeName |
Organometallic Vapor Phase Epitaxy
|
| gptkbp:depot |
compound semiconductors
II-VI materials III-V materials |
| gptkbp:enables |
precise thickness control
high purity films complex multilayer structures |
| https://www.w3.org/2000/01/rdf-schema#label |
Metalorganic Chemical Vapor Deposition
|
| gptkbp:inventedBy |
1960s
|
| gptkbp:operatesIn |
high temperature
|
| gptkbp:precursorsInclude |
gptkb:trimethylaluminum
phosphine arsine trimethylgallium |
| gptkbp:processor |
chemical vapor deposition
|
| gptkbp:relatedTo |
gptkb:Atomic_Layer_Deposition
gptkb:Molecular_Beam_Epitaxy |
| gptkbp:requires |
substrate
carrier gas reactor chamber |
| gptkbp:usedBy |
electronics industry
optoelectronics industry photovoltaics industry |
| gptkbp:usedFor |
semiconductor fabrication
LED production epitaxial growth laser diode fabrication solar cell fabrication |
| gptkbp:uses |
metalorganic precursors
|
| gptkbp:bfsParent |
gptkb:Liquid_Phase_Epitaxy
|
| gptkbp:bfsLayer |
7
|