Statements (28)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:chemical_compound
|
| gptkbp:bandGap |
3.4 eV
|
| gptkbp:CASNumber |
25617-97-4
|
| gptkbp:category |
gptkb:chemical_compound
gptkb:III-V_semiconductor |
| gptkbp:chemicalFormula |
gptkb:GaN
|
| gptkbp:color |
white
|
| gptkbp:containsElement |
gptkb:gallium
nitrogen |
| gptkbp:crystalSystem |
gptkb:wurtzite
|
| gptkbp:density |
6.15 g/cm³
|
| gptkbp:discoveredIn |
1930s
|
| gptkbp:hardness |
high
|
| https://www.w3.org/2000/01/rdf-schema#label |
gallium nitride
|
| gptkbp:meltingPoint |
>1700 °C
|
| gptkbp:semiconductorType |
wide bandgap
|
| gptkbp:solubility |
insoluble
|
| gptkbp:thermalConductivity |
high
|
| gptkbp:toxicity |
low
|
| gptkbp:usedFor |
high-frequency devices
high-power devices high-temperature devices |
| gptkbp:usedIn |
LEDs
RF components power electronics laser diodes |
| gptkbp:bfsParent |
gptkb:battery
|
| gptkbp:bfsLayer |
4
|