Statements (36)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
gptkb:high_electron_mobility_transistor transistor |
| gptkbp:abbreviation |
gptkb:Gallium_Arsenide_Pseudomorphic_High_Electron_Mobility_Transistor
|
| gptkbp:application |
wireless communication
RF circuits microwave frequency amplification |
| gptkbp:channelMaterial |
gptkb:InGaAs
|
| gptkbp:feature |
low power consumption
low noise two-dimensional electron gas high-speed switching high gain high linearity high electron mobility high frequency performance heterojunction structure modulation-doped structure pseudomorphic channel |
| https://www.w3.org/2000/01/rdf-schema#label |
GaAs PHEMT
|
| gptkbp:material |
gptkb:gallium_arsenide
|
| gptkbp:substrate |
gptkb:GaAs
|
| gptkbp:usedIn |
radar systems
satellite communication cellular base stations power amplifiers low noise amplifiers |
| gptkbp:bfsParent |
gptkb:ATF55C_series
gptkb:ATF56C_series gptkb:ATF60C_series gptkb:ATF65C_series gptkb:ATF79C_series gptkb:ATF94C_series gptkb:ATF96C_series gptkb:ATF98C_series |
| gptkbp:bfsLayer |
6
|